姓名： 冀会辉
性别： 女
职务： 博士后
职称： 博士后
通信地址： 北京航空航天大学新主楼F1010
邮编： 100083
联系电话： 010-82339209
邮箱地址： jihuihui@buaa.edu.cn
主页地址： 暂无主页
---> 教授课程
半导体物理与器件
---> 主要研究领域
集成电路设计;
集成电路工艺模拟
---> 正在研究项目
模拟集成电路的分析与设计
---> 最近发表论著
HuihuiJi，Min Yu, Hao Shi, Xiaokang Shi, Ru Huang, Xing Zhang, etc.，“Molecular dynamics simulation of ion implantation into hafnium dioxide”，Nuclear instruments and methods in physics research B, 2004, Vol.226, P 537.
HuihuiJi，Min Yu，Hao Shi，ect., “Simulation of implantation into HfO2 by MD method”, IWJT international conference at Shanghai, 2004, P 313-316.
Huihui Ji, Liming Ren, Min Yu, etc., “Plasma doping process for SOI technology”, the 6th National Symposium on SOI Technology. (Chinese)
Huihui Ji, Qingshan Li, “Absorption and photoluminescence spectra of PhB/SiO2 Gel”, Journal of Optoelectronics & Laser, 2002, Vol.13, No.9, P969. (Chinese)
Huihui Ji, Qingshan Li, “Photoluminescence of phodamine B doped SiO2 gels”， Chinese journal of luminescence，2002,Vol.23, No.3, P 282. (Chinese)
Xiaokang Shi, Min Yu, Huihui Ji, “A new simulation method of ion implantation”，IWJT 2004, 2004, p 305-308.
Min Yu, Rong Wang, Huihui Ji, Defects in Ion Implantation and Annealing Studied by Atomistic Model, ICSICT 2004.
Min Yu，Ru Huang，Xiaokang Shi, Huihui Ji, “Studying shallow junction technology by atomistic modeling”，IWJT 2004, p 297-301.
Rong Wang, Min Yu, Kai Zhan, Xiaokang Shi, Huihui Ji, “A New Damage Model for Ion Implantation Simulation with Molecular Dynamics Method”, ICSICT 2004.