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许小亮
8.2我来评喜爱度
所在大学:中国科学技术大学
所在院系:理学院
所在地区:安徽
所在城市:合肥
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许小亮老师介绍
许小亮,教授. 1960年2月出生于江苏省南京市。1999年香港大学博士研究生毕业, 获哲学博士学位. 2003年获安徽省高等院校优
秀科技成果一等奖(排名第一),2004年获安徽省科学技术(自然科学)二等奖(排名第一)。
教学工作:主讲普通物理(甲型、乙型)、大学四级(研究型)物理实验等.
科研方向:凝聚态物理.
主要研究工作:
1)纳米材料与生物医学和环境学的交叉研究
(a) 纳米荧光量子点和磁性量子点标记于生物肿瘤细胞,在体外和活体中研究肿瘤的发生发展和转移的过程,并应用于手术在线治疗。
(b) 将具有环保自清洁功能的纳米自组装材料涂覆于建材表面,达到降解污染和排除粉尘的要求。
2)宽禁带半导体复合薄膜材料的激光研究
(a) 研究宽禁带半导体ZnO, GaN与纳米金属颗粒构成的复合材料中表面等离子激元(SP)对于激光的近场增强效应。
(b) 研究纳米半导体自组装材料(棒状、球状以及球壳等特殊形状)的发光(包括激光)、光传输以及电学输运特性。
发表的代表性论文:
所发表的89篇论文中,已有37篇被SCI收录(国际国内会议论文集的文章被SCI收录的7篇不算),80%以上为高影响因子刊物,平均每篇文章的影响因子为2.23;12篇被EI收录;17篇发表在国内外核心刊物,15篇发表在重要国际会议论文集, 8篇发表在一般刊物。打 “*”的为指导研究生或本科生所做论文。
1. Xu K Z, Yang B X, Hao L Y and Xu X L. Angular distribution measurement of emitted photons in fast electron impact of sodium. Phys. Rev. A, 40, No.9 (1989). (SCI, f = 3.20)
2. Xu K Z, Yang B X, Hao L Y and Xu X L. Measurement of polarity of Cerenkov line radiation in sodium. Science Bulletins (in Chinese: Ke Xue Tong Bao), 21, 1647(1990). (SCI, f = 0.75)
3. Hao L Y, Xu X L, Xu K Z, and Yang B X. Design of electron stable device in monoenergy electron gun. Nuclear Techniques ( in Chinese ), 15(2), 98(1992). (核心)
4. Hao L Y, Xu X L, Xu K Z, and Yang B X. Study of luminescence spectra in scientilator excited by keV monoenergy electrons. Nuclear Electronics & Detection Technology ( in Chinese ), 11(5), 1 (1991). (核心, 为美国化学文摘(CA)收录)
5. Xu X L, Hao L Y, Xu K Z, and Yang B X. The effection of self-absorption in scientilator on the energy resolving power. Nuclear Electronics & Detection Technology ( in Chinese ), 12(4), 1(1992). (核心,为美国化学文摘(CA)收录)
6. Xu X L, Hao L Y, Xu K Z, Yang B X, and Liu C R. Cathodoluminescence spectra of interband transitions in monocrystalline germanium, J. Phys.: Condens. Matter 5, L587(1993). (SCI, f=2.045)
7. L Y Hao, B X Yang, K Z Xu and X L Xu, Phys. Rev. B. 47(20),13320(1993). (SCI, f=3.50)
8. Xu X L, Zhu L X, S Fung, Liu C R, Hao L Y and Xu K Z. Cathodoluminescence spectra of OPA film on Ge(111). J. Phys.: Condens. Matter 6, L527(1994). (SCI, f=2.045)
9. Xu X L, Hao L Y, Xu K Z, Chen T P and S Fung. Cathodoluminescence from interband transitions in germanium (111) and gallium arsenide (100) crystals. Phys. Rev. B, 52(3), 1452(1995). (SCI, f=3.50)
10. Xu X L, Zhu L X, Chen T P, and S Fung. Optical properties of interband transitions in the OPA film on GaAs (100). Phys. Stat. Soli. (b) 192, 217(1995). (SCI, f=1.43)
11. Xu X L, Zhu L X, Chen T P, S Fung, and Li S M. Optical transitions in germanium dioxide. Thin Solid Films 283, 230(1996). (SCI, f=1.56)
12. S Fung, Xu XL, Zhao YW. Ga/Al interdiffusion between n-GaN and sapphire. J. Appl. Phys. 84(4), 2355 (1998). (SCI, f=2.43)
13. Zhao YW, Xu XL, Gong M, S Fung, CD Being. Formation of PIn defect in annealed liquid-encapsulated Czochralski InP. Appl. Phys. Lett. 72(17), 2126 (1998). (SCI, f=4.30)
14. S Fung, Zhao YW, CD Being, Xu XL. Compensation ratio-dependent of a VInH4 complex in n-type liquid encapsulated Czochralski InP. Appl. Phys. Lett. 73(9), 1275 (1998).(SCI, f=4.30)
15. Li SM, Xu XL, Liu YY, Zhou ZF, Chen J., Dressing modification in the Laser-assisted proton-helium change exchange collision. Euro. Phys. J. D. 2, 237 (1998). (SCI, f=2.20)
16. Hao L Y, Hou B H and Xu X L, Cathodoluminescence of silicon in the visible-ultraviolet region. Phys. Rev. B. 57(20),12841(1998). (SCI, f=3.5)
17. S.Fung, Y W.Zhao, X L Xu and X D Chen, Compensation defects in annealed undoped liquid encapsulated Czochralsky InP. J. Appl. Phys. 86(2),951(1999). (SCI, f=2.43)
18. S.Fung, Y W.Zhao, and X L Xu, Thermally induced type conversion in n-type InP. J. Appl. Phys. 86(4), 2361(1999). (SCI, f=2.43)
19. X L Xu, C D Beling, S Fung and Y W Zhao, Formation mechanism of a degenerate thin layer at the interface of GaN and sapphire. Appl. Phys.Lett. 76(2), 152(2000). (SCI, f=4.30)
20. 许小亮,施朝淑。 纳米微晶结构ZnO及其紫外激光。物理学进展。(20)4,356(2000)
(核心,为SCI定期收录)
21. 许小亮,施朝淑。 GaN中的缺陷与杂质。物理学进展。(21)1,1(2001)
(核心,为SCI定期收录)
22. X. L. Xu, H. T. Liu and C. S. Shi, “Compansation and residual donors in metalorganic chemical vapor deposition as-grown GaN” J. Appl. Phys .90(11), 1095(2001) (SCI, f=2.43)
23. 许小亮,施朝淑,陈永虎, E.Z.Luo, B.Sundar, and I. H. Wilson, “退火对大剂量Al离子注入GaN发光特性的影响”。液晶与显示。17(2),1(2002) (CA)
24. 许小亮,何海燕,刘宏图,施朝淑,葛惟昆,E.Z.Luo, B.Sundar, and I. H. Wilson, “大剂量Al离子注入GaN产生的深能级”。液晶与显示。17(4),1(2002) (CA)
25. 许小亮,杨晓杰,付竹西,“p型ZnO和ZnO同质p-n结的研究进展” 功能材料。34(2), 121(2003) (EI)
26. X. L. Xu et. al. “Annealing effect for surface morphology and luminescence of ZnO film on silicon”. Chemical Phys. Lett. 364, 57 (2002) (SCI,f=2.65)
27. X. L. Xu et. al. “Photo-stimulated current spectroscopy and it’s application in Al+ implantation-induced deep traps in GaN”. Thin Solid Films. 416, 294 (2002) (SCI, f=1.54)
28*. 杨秀健,施朝淑,许小亮,纳米ZnO和ZnO:Eu3+的表面效应及发光效应。物理学报。51(12), 2871(2003) (SCI, f=1.23)
29*. 杨秀健,施朝淑,许小亮,纳米结构ZnO的研究及其进展。无机材料学报。18(1), 1(2003)(SCI,f=0.75)
30. 施朝淑,陈永虎,张国斌,许小亮,汤洪高,闪烁晶体的发光研究进展。发光学报。23(3),217(2002) (核心,CA)
31. 许小亮,徐军,徐传明,杨晓杰,郭常新,施朝淑,Si表面上生长的ZnO薄膜的阴极射线荧光。发光学报。24(2),171(2003) (核心,CA)
32. 许小亮,杨晓杰,谢家纯,徐传明,徐军,刘洪图,施朝淑,以硅为衬底的ZnO p-n结的制备及其结构、电学和光学性质。发光学报。24(6), (2003) (核心,CA)
33.* 徐传明,许小亮,闵海军,徐军,杨晓杰,黄文浩,刘洪图,“周期顺序蒸发工艺生长的Cu(In,Ga)Se2薄膜结构研究”半导体学报,24, 1057(2003) (EI)
34.*Chuanming Xu,Xiaoliang Xu, Xueming Dang, “ANNEALING EFFECTS ON THE STRUCTURE PROPERTIES OF Cu(In,Ga)Se2 / ZnO THIN FILMS”,2003 IEEE 3rd World Conference on Photovoltaic Energy Conversion – WCPEC (A Joint Conference of PVSC, PVSEC & PSEC), Osaka, Japan (Program No. 2P-A8-17), 414 (2004) (EI)
35. *Chuanming Xu,Jun Xu,Xiaoliang Xu, “GREEN 3R-CONCEPT DESIGN FOR Cd-BASED PV MODULES”,2003 IEEE 3rd World Conference on Photovoltaic Energy Conversion – WCPEC (A Joint Conference of PVSC, PVSEC & PSEC), Osaka, Japan(Program No:6P-A9-47),1942(2004)(EI)
36*Chuanming Xu, Xiaoyong Pan, Xiaoliang Xu,“ECONOMIC EVALUATION ON FUZZY ANALYTIC HIERARCHY PROCESS MODEL FOR RECYCLING Cu(In,Ga)Se2 /ZnO PV MODULES”,2003 IEEE 3rd World Conference on Photovoltaic Energy Conversion – WCPEC (A Joint Conference of PVSC, PVSEC & PSEC), Osaka, Japan (No:6P-A9-62), 1992 (2004) (EI)
37. Xiaoliang Xu, Pei Wang, Zemin Qi et al, “Formation mechanism of Zn2SiO4 crystal and amorphous SiO2 in ZnO / Si system”, J. Phys: Conden Mat 15, L607-613(2003) (SCI, f=2.045)
38. 许小亮,杨晓杰,谢家纯等,以硅为衬底的ZnO p-n结的制备及其结构、电学和光学性质。发光学报25(3), (2003) (核心,CA)
39 许小亮, 杨晓杰, 谢家纯,以硅为衬底的ZnO p-n结的制备及其结构、电学和光学性质。发光学报24 (6), (2004) (核心)
40 *Chuan-Ming Xu, Wen-Hao Huang, Jun Xu, Xiao-Jie Yang, Jian Zuo, Xiao-Liang Xu and Hong-Tu Liu. Defect–induced structure disorder in Tetragonal Cu(In1–xGax)5Se8/ ZnO thin films by Raman spectroscopy:the effect of Ga addition. J. Phys: C M, 16,4149 (2004) (SCI, f=2.045)
41 *徐传明, 许小亮, 徐军, 杨晓杰, 左健, 党学明, 冯叶, 黄文浩, 刘洪图.Cu(In,Ga)3Se5薄膜结构的Raman研究. 半导体学报, Vol. 25,1062(2004) (EI)
42 *Chuan-Ming Xu, Xiao-Liang Xu, Jun Xu, Xiao-Jie Yang, Jian Zuo, Ning Kong, Wen-Hao Huang and Hong-Tu Liu. Composition dependence of the Raman A1 mode and additional mode in Tetragonal Cu–In–Se thin films. Semiconductor Science and Technology, 19,1201-6(2004) (SCI, f=2.215)
43 *郭嘉,龚明,许小亮,退火对sol-gel法生长的SiO2薄膜特性的影响。功能材料,35,3171(2004) (EI)
44 *关博, 江勇,许小亮等,溅射沉积法制备薄膜的结构特性。功能材料,35,3238(2004)(EI)
45 汪壮兵,许小亮,陈莹莹等,用电泳法制备ZnxMg1-xO薄膜及其特性研究。物理学报,53,(11), 3924 (2004) (SCI,f=1.23)
46 许小亮,何海燕,徐军等,薄膜制备实验的特殊性及教学尝试。物理与工程14(2),40(2004)(核心)
47 徐军,许小亮,何海燕等,利用网络资源进行四级物理实验的科研设计。大学物理实验17(1),16(2004) (核心)
48 朱立新,许小亮等,血管的周向应力计算及其应用。医用生物力学 19, 159(2004) (核心)
49 汪壮兵,许小亮, Si衬底电沉积制备ZnO及其特性研究. 安徽大学学报 29, 79(2005) (核心)
50 汪壮兵,许小亮, 阴极电沉积制备ZnO及其特性研究。合肥工业大学学报28,330(2005) (核心)以下51 – 58为教改文章
51 徐军,许小亮,何海燕等,物理实验中如何指导学生进行科研设计。教育与现代化68,3(2003) 徐军,
52 许小亮,何海燕等,网络资源环境下的科研设计与文献调研. 中华学术论坛7,29(2003)
53 许小亮,何海燕,徐军等,大学四级物理实验中的互动式科研训练. 中华教育7,59(2003)
54 许小亮,何海燕,徐军等,透明导电薄膜制备实验教学中的场景对话. 中华学术论坛4,3(2003)
55 徐军,许小亮,何海燕等,透明导电ZnO薄膜制备系列实验中的化学清洗. 中国教育改革11,43(2003)
56 许小亮,何海燕,徐军等,谈谈大学物理实验课教学. 中华教育11,71(2003)
57 徐军,许小亮,何海燕等,四级物理实验中的ZnO靶材制备. 中华学术论坛5,33(2003)
58 许小亮,何海燕,徐军等,大学物理实验课程教学探讨. 实验科学与技术3,62(2004)
59 *杨晓杰,许小亮,谢家纯等,ZnO同质p-n结的研究。真空科学与技术,25(12), 101-4(2005)增刊。 (SCI, f=1.03)
60 *X.J Yang, X.Y. Miao and X.L.Xu, X-ray photoelectron spectroscopy and photoluminescence properties of highly ordered ZnO microrods. Optical Mater 27(10), 1602-6(2005)
(SCI,f=1.56)
61 *Y. Jiang, B. Guan, and X. L. Xu, Microstructure of Au film prepared by magnetron sputtering deposition. Chin. Phys. Lett.22(3),730-3(2005) (SCI,f=1.17)
62 *B. Guan and X.L. Xu, Review on the Fundamental Theory and Technology of Z-scan . J.Func. Met.(China)37(3), 474-7 (2006) (EI)
63 X. L. Xu, L. Y. Wang, C. S. Shi, Photoluminescence property of Zn1-xMgxO films grown by RF magnetron sputtering J.Func. Met.(China)37(2),319-321(2006) (EI)
64 X. L. Xu, L. Lu, C. S. Shi, Photoluminescence and structure properties of Zn1-xMgxO films grown by RF magnetron sputtering . J. Phys: CM 18(4), 1189-96 (2006) (SCI, f=2.045)
65 *牟威圩,许小亮,感染生长模型的逾渗模拟. 物理学报55(6), 2871-6 (2006) (SCI, f=1.23)
66 *W.W.Mou and X.L.Xu, Multifractal and percolation study on thin film growth with a cell-automata model. Physics Letters A, 354(5-6), 492-6(2006) (SCI, f=1.64)
67 许小亮,王烨,赵亚丽,磁控溅射法制备的纳米金薄膜的工艺条件和结构分析。功能材料 37 (8),1216-19(2006) (EI)
68 *赵亚丽,明海,许小亮,用磁控溅射法制备的Ag-MgF
的复合薄膜的研究。功能材料 38,(2007)( accepted for publication) (EI)
69 *赵亚丽,高帆,汪壮兵,许小亮, Ag—SiO2复合薄膜形貌和光学性质的研究. 物理学报56(6), (2007) (accepted for publication) (SCI, f=1.23)
70 *赵亚丽, 许小亮, Ag颗粒的形貌对费米能级及其吸收特性的影响. 物理化学学报 (2007) 已投 (SCI f=0.77)
71 *Yali Zhao, Zhuangbing Wang, and Xiaoliang Xu, Structure and Optical Absorption Properties of Ag-SiO2 Films. Eur. Phys. J. B (2007)已投 (SCI f=1.45)
72 *徐传明,许小亮,谢家纯,Cu(In,Ga)3Se5薄膜的结构及其缺陷研究。真空科学与技术,26(9), 53-56(2006)增刊 (SCI, f=1.03)
73 Xiao-Liang Xu, Liao-Yuan Wang, Li-Feng Yan, Ming-Tao Yang, and Chao-Shu Shi,Characteristics of low lasing threshold Zn1-xMgxO films grown by RF magnetron sputtering. Solid State Phenomena, 121-123,487-490 (2007) (SCI, f=1.58)
74 *Ye Wang, Xiao-liang Xu, Wei-yu Xie, Zhuang-bing Wang, Liu Lv, Ya-li Zhao, Two-step growth of the c-axis oriented ZnO nanorod arrays. Mater. Letts. (2007) submitted
(SCI, f=1.75)
以下是国际国内会议论文集收录的文章:
75 Yang B X, Xu K Z, Hao L Y and Xu X L. Proc. of the 4th international conference of Atomic and molecular physics ( Wuhan, China 1988 )
76 Xu K Z, Yang B X, Hao L Y and Xu X L. Sixteenth international conference on the physics of electronic and atomic collisions, 208 , New York (1989) (SCI)
77 Xu X L, Hao L Y, Xu K Z, and Yang B X. International Symposium Electron Collisions with Molecules, Clusters and Surfaces (Conference of XVIII ICPEAC, Arhus 1993) (SCI)
78 Xu X L, Hao L Y, Xu K Z, and Yang B X. International Symposium Electron Collisions with Molecules, Clusters and Surfaces (Conference of XVIII ICPEAC, Arhus 1993) (SCI)
79 Hao L Y, Xu X L, Xu K Z, and Yang B X. International Symposium Electron Collisions with Molecules, Clusters and Surfaces (Conference of XVIII ICPEAC, Arhus 1993) (SCI)
80 Li S M, Liu Y Y, Zhou Z F, Chen J and Xu X L. Proc. 7th national conference of atomic and molecule physics. ( Huangshan, 1994 )
81 C D Beling, S Fung, and Xu X L. Invited report in 2nd International conference of Overseas Chinese Physicist Association(Taibei, 1997) (国际会议特邀报告)
82 Y W Zhao, X L Xu, C D Beling and S Fung, 10th International Conf. On InP and Related Materials. (Tsukuba, May 1998). (SCI)
83 Zhao Y W, S Fung, C D Beling and Xu X L, 10th International Conf. On InP and Related Materials. (Tsukuba, May 1998). (SCI)
84 X L Xu, H Y He, H T Liu, W K Ge, E.Z.Luo, B.Sundar, and I. H. Wilson, Deep traps in Al+ Implan- tation-induced GaN. Proceedings of 13th National Semiconductor Conference, 2001,Suzhou, China
85 许小亮,谢家纯,杨晓杰等,以硅为衬底的ZnO p-n结的制备及其电学输运特性。首届全国氧化锌学术会议论文集。(2003.3 海口) p49
86 杨晓杰, 许小亮,谢家纯等,ZnO同质p-n结的研究。 TFC’03全国薄膜技术研讨会 ( 2003.9, 宁波 ) p56
87 徐传明,许小亮,谢家纯等,Cu(In,Ga)3Se5薄膜的结构及其缺陷研究。TFC’03全国薄膜技术研讨会 ( 2003.9, 宁波 ) p55
88 龚明,郭嘉,许小亮,影响溶胶-凝胶法制备二氧化硅薄膜厚度和光学性质的几个要素。全国凝聚态物理会议。(2004,乌鲁木齐)
89 X.L.Xu, L.Y.Wang, Y. Wang, Photoluminescence property of Zn1-xMgxO films grown by RF magnetron sputtering. China-nano 2005,2P88-10 (Beijing) (SCI)
办公电话: 0551-3607574
Email: xlxu@ustc.edu.cn
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