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PiBiao老师介绍
Name: Pi Biao
Title: Senior Engineer
Degree: Ph.D
Research Interest: Semiconductor Materials & Devices
Tel.(office): 86-22-66229458
E-mail: pib@tedamail.nankai.edu.cn
Introduction:
Male, born in 1967, Native place is HeGang City of HeiLongJiang Province, China.
B.S. in Precision Instrument Engineering, Xi'an University of Technology, Xi'an, China, 1989.
M.S. in Department of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an, China, 1999.
Ph.D. in Condensed Matter Physics, College of Physics Science, Nankai University, Tianjin, China , 2007.
EMPLOYMENT:
Working as a Senior Engineer in The NingXia Nonferrous Metal Metallurgy in 1999.
Projects, achievements, awards, patents, etc.
1st Rank Award of Scientific & Technological Achievement of the Nonferrous Metal Industry Corp. of China.
Publications(representative or published in the last 5 years)
1. Biao Pi, Yongchun Shu, Yaowang Lin, Jiaming Sun, Shengchun Qu, Jianghong Yao, Xiaodong Xing, Bo Xu , Qiang Shu, Zhanguo Wang, Jingjun Xu, Morphological and electrical properties of InP grown by solid source molecular beam epitaxy, J. Cryst. Growth, 299,243-247(2007).
2. PI Biao, SUN Jia-ming, LIN Yao-wang, YAO Jiang-hong, XING Xiao-dong, CAI Ying,SHU Qiang, JIA Guo-zhi,LIU Ru-bin, LI Dan, WANG Zhan-guo, Unstable growth in InP homoepitaxy:Mound formation, JOURNAL OF SYNTHETIC CRYSTALS, Vol.36(2):263-266(2007).
3. Biao Pi, Yongchun Shu, Yaowang Lin, Jiaming Sun, Jianghong Yao, Xiaodong Xing, Bo Xu, Shengchun Qu, Qiang Shu, Guanjie Zhang, Zhanguo Wang, Growth mode transition InP epilayers by solid source molecular beam epitaxy, Chinese Journal of Semiconductors,Vol.28 Supplement: 45-49(2007).
4. SHU Yong-chun, PI Biao, LIN Yao-Wang,XING Xiao-dong,YAO Jiang-hong, WANG Zhan-guo, XU Jing-jun, High electron mobility of modulation doped GaAs after growing InP by solid source molecular beam epitaxy, Trans.Nonferrous Met.Soc.China (SCI),Vol.15(2), 332-335(2005).
5. Zhang Guanjie, Shu Yongchun, Pi Biao, Xing Xiaodong, Lin Yaowang, Yao Jianghong, Wang Zhanguo and Xu Jingjun, Compatibility study on growing high quality modulation doped GaAs and InP/InP epilayers by solid source molecular beam epitaxy, JOURNAL OF SYNTHETIC CRYSTALS,Vol.34 (3), 395-398 (2005).
Title: Senior Engineer
Degree: Ph.D
Research Interest: Semiconductor Materials & Devices
Tel.(office): 86-22-66229458
E-mail: pib@tedamail.nankai.edu.cn
Introduction:
Male, born in 1967, Native place is HeGang City of HeiLongJiang Province, China.
B.S. in Precision Instrument Engineering, Xi'an University of Technology, Xi'an, China, 1989.
M.S. in Department of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an, China, 1999.
Ph.D. in Condensed Matter Physics, College of Physics Science, Nankai University, Tianjin, China , 2007.
EMPLOYMENT:
Working as a Senior Engineer in The NingXia Nonferrous Metal Metallurgy in 1999.
Projects, achievements, awards, patents, etc.
1st Rank Award of Scientific & Technological Achievement of the Nonferrous Metal Industry Corp. of China.
Publications(representative or published in the last 5 years)
1. Biao Pi, Yongchun Shu, Yaowang Lin, Jiaming Sun, Shengchun Qu, Jianghong Yao, Xiaodong Xing, Bo Xu , Qiang Shu, Zhanguo Wang, Jingjun Xu, Morphological and electrical properties of InP grown by solid source molecular beam epitaxy, J. Cryst. Growth, 299,243-247(2007).
2. PI Biao, SUN Jia-ming, LIN Yao-wang, YAO Jiang-hong, XING Xiao-dong, CAI Ying,SHU Qiang, JIA Guo-zhi,LIU Ru-bin, LI Dan, WANG Zhan-guo, Unstable growth in InP homoepitaxy:Mound formation, JOURNAL OF SYNTHETIC CRYSTALS, Vol.36(2):263-266(2007).
3. Biao Pi, Yongchun Shu, Yaowang Lin, Jiaming Sun, Jianghong Yao, Xiaodong Xing, Bo Xu, Shengchun Qu, Qiang Shu, Guanjie Zhang, Zhanguo Wang, Growth mode transition InP epilayers by solid source molecular beam epitaxy, Chinese Journal of Semiconductors,Vol.28 Supplement: 45-49(2007).
4. SHU Yong-chun, PI Biao, LIN Yao-Wang,XING Xiao-dong,YAO Jiang-hong, WANG Zhan-guo, XU Jing-jun, High electron mobility of modulation doped GaAs after growing InP by solid source molecular beam epitaxy, Trans.Nonferrous Met.Soc.China (SCI),Vol.15(2), 332-335(2005).
5. Zhang Guanjie, Shu Yongchun, Pi Biao, Xing Xiaodong, Lin Yaowang, Yao Jianghong, Wang Zhanguo and Xu Jingjun, Compatibility study on growing high quality modulation doped GaAs and InP/InP epilayers by solid source molecular beam epitaxy, JOURNAL OF SYNTHETIC CRYSTALS,Vol.34 (3), 395-398 (2005).
PiBiao老师相关教学资源
- 南开大学教学资源
- PiBiao老师课程教学资源
